本文研究了用于制作压阻元件的LPCVD多晶硅薄晶体结构与淀积温度,膜厚及热处理温度的关系。多晶硅薄膜的织构和晶粒度不仅与淀积温度有关,而且与膜厚有着密切的关系,1000℃以上的高温热处理具有增大晶粒度和减小薄膜在淀积过程中形成的晶粒优先取向的作用。 In this paper, the relationship between the structure and the deposition temperature, film thickness and heat treatment temperature of LPCVD polycrystalline silicon thin films used to fabricate piezoresistive elements was studied. The texture and grain size of the polycrystalline silicon film are not only related to the deposition temperature but also closely related to the film thickness. The high temperature heat treatment above 1000 ° C has the advantages of increasing the grain size and reducing the grain formed during deposition of the film The role of priority orientation.