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把掺杂层对HgCdTe光导探测器表面的影响视为掺杂层电活性载流子与基底材料电活性载流子之比的函数关系,作了理论研究。结论是:在较薄层正面和背面作适当掺杂,可能提高光导探测器的响应率。
The effect of doped layer on the surface of HgCdTe photoconductive detector is considered as a function of the ratio of the electroactive carriers of the doped layer to the electroactive carriers of the substrate. The conclusion is that proper doping at the front and back of the thinner layer may increase the response of the photoconductive detector.