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文章设计并搭建了一个金属氧化物半导体材料光电流谱测试平台。采用溶胶凝胶的方法在FTO上制作了掺杂Al的ZnO多孔膜材料并测试了其光电流谱。通过测试结果可以看到,相对于纯ZnO,掺杂Al的ZnO多孔膜在入射光波长为480nm时有明显响应,同时响应的绝对值也较高。这是由于掺杂Al导致多孔膜中Zn空位增加而引起的。这个现象表明掺杂的方式会引入特定的缺陷,使得材料在本征光电导区间外也有一定的响应,可以扩展了材料的波长响应区间。同时,我们的研究也表明,光电流谱的测试方式可以原位、直接、快速和准确地表征材料中缺陷对光电性能的影响。
The paper designs and sets up a photocurrent spectrum test platform for metal oxide semiconductor materials. Al doped ZnO films were fabricated on FTO by sol-gel method and their photocurrent spectra were tested. It can be seen from the test results that compared with pure ZnO, the Al-doped ZnO porous film has obvious response when the incident light has a wavelength of 480 nm and the absolute value of the response is also high. This is caused by the increase of Zn vacancies in the porous membrane due to Al doping. This phenomenon shows that the doping method will introduce specific defects, making the material also have a certain response outside the intrinsic photoconductive region, which can expand the material wavelength response interval. At the same time, our research also shows that the photocurrent spectrum test method can in situ, directly, quickly and accurately characterize the defects in the material on the photoelectric properties.