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利用离子辅助电子束蒸发技术在不同沉积工艺参数下制备了ITO薄膜,详细讨论了沉积工艺参数的变化对ITO薄膜表面形貌及晶体结构的影响。结果表明:随基板温度的升高,ITO薄膜的缺陷增多,表面粗糙度增大。高温下沉积的薄膜为多晶结构,并呈现[111]择优取向;随着沉积速率的升高,薄膜表面粗糙度变大,结晶度升高,晶粒尺寸增大,呈现出沿[001]取向择优生长的趋势,并且低速率下沉积的薄膜中包含除立方氧化铟外的其他晶相。
ITO films were prepared by ion-assisted electron beam evaporation at different deposition parameters. The effects of deposition parameters on the morphology and crystal structure of ITO films were discussed in detail. The results show that with the increase of substrate temperature, the defects of ITO film increase and the surface roughness increases. The films deposited at high temperature have a polycrystalline structure with a preferred orientation of [111]. As the deposition rate increases, the film surface roughness increases, the crystallinity increases, and the grain size increases. The orientation favors the tendency of growth and the films deposited at low rates contain other crystalline phases other than cubic indium oxide.