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与传统硅基功率二极管相比,碳化硅肖特基势垒二极管(SiC SBD)可提高开关频率并大幅减小开关损耗,同时有更高的耐压范围。设计并制作了具有场限环结终端和Ti肖特基接触的1.2 kV/30 A SiC SBD器件,研究了该SiC SBD在100~300℃时的反向恢复特性。实验结果表明,温度每上升100℃,SiC SBD反向电压峰值增幅为5%左右,而反向恢复电流与反向恢复时间受温度影响不大;温度每升高50℃,反向恢复损耗功率峰值降低5%。实验结果表明该SiC SBD在高温下能够稳定工作,且具有良好的反向恢复特性,适用于卫星、航空和航天探测、石油以及地热钻井探测等需要大功率、耐高温和高速器件的领域。
Silicon carbide Schottky barrier diodes (SiC SBDs) increase switching frequency and drastically reduce switching losses compared to traditional silicon-based power diodes, while offering a higher withstand voltage range. A 1.2 kV / 30 A SiC SBD device with field-limited ring junction and Ti Schottky contact was designed and fabricated. The reverse recovery characteristics of the SiC SBD at 100 ~ 300 ℃ were investigated. The experimental results show that for every 100 ℃ rise in temperature, the peak reverse voltage increase of SiC SBD is about 5%, while the reverse recovery current and reverse recovery time are not affected by the temperature. For every 50 ℃ increase in temperature, the reverse recovery loss power Peak reduction of 5%. The experimental results show that the SiC SBD can work stably at high temperature and has good reverse recovery characteristics. It is suitable for the fields of high power, high temperature and high speed devices such as satellite, aerospace and aerospace exploration, petroleum and geothermal drilling exploration.