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以无机盐为原料,采用改进型溶胶-凝胶法在SNTO(SrNb_(0.05)Ti_(0.95)O_3)/SiO_2/Si底电极上制备了BFO(BiFeO_3)薄膜;然后经550、600℃退火30 min后,得到BFO薄膜产品。研究结果表明:该电极上形成的BFO薄膜都呈现R3m(BaC_2高压相)三方钙钛矿多晶结构,并具有(100)晶格取向,没有观察到不纯相;构成BFO薄膜的(100)、(110)晶面间距约为0.39、0.28 nm;经550、600℃退火处理后,该薄膜具有较大的2P_r(剩余极化强度),在250 kV/cm测试电场作用下,其2P_r分别为40.43、48.31μC/cm~2,矫顽场分别为104、118 kV/cm;在300 kV/cm测试电场作用下,两者的漏电电流密度分别为10~(-5)、10~(-4)A/cm~2;在整个测试频率范围内,薄膜具有相对较小的介电损耗因子。
BFO (BiFeO_3) thin films were prepared on the SNTO (SrNb_ (0.05) Ti_ (0.95) O_3) / SiO_2 / Si bottom electrode by the improved sol-gel method using inorganic salts as raw materials. min, get BFO film products. The results show that all the BFO films formed on the electrode exhibit the polycrystalline structure of R3m (BaC_2 high pressure) tripartite perovskite with (100) lattice orientation and no impure phase is observed. The (100) (110) plane is about 0.39,0.28 nm. After annealed at 550,600 ℃, the film has a larger 2P_r (remanent polarization). Under the test electric field of 250 kV / cm, the 2P_r The coercive fields were 104 and 118 kV / cm respectively. Under the applied electric field of 300 kV / cm, the leakage current densities of the two were 10 -5 and 10 ~ -4) A / cm ~ 2; the film has a relatively small dielectric loss factor over the entire test frequency range.