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采用精确对角化方法,研究了限制在半导体量子点中双激子的量子尺寸效应.计算了双激子量子点的基态和低激发态的关联能随限制强度大小变化的关系,揭示了双激子量子点的基态和低激发态能谱的重要性质.我们发现随着限制强度的增加,双激子量子点的基态和低激发态的关联能变化是不同的;我们还发现限制可以引起不同低激发态能级的偶然简并和能级的反转.这些性质都与系统的交换和旋转对称性有关.
The exact diagonalization method was used to study the quantum size effect of double excitons confined in the semiconductor quantum dots.The relationship between the ground state and the low excited states of the two exciton quantum dots as a function of the limiting intensity was calculated, The important properties of the excited state and the ground state of the exciton quantum dots We found that the change in the association energy between the ground state and the low excited state of the two exciton quantum dots is different as the limiting intensity increases; we also find that the limitation can cause Incidental degeneracy and inversion of energy levels for different low-excitation energy levels, all of which are related to the exchange and rotational symmetry of the system.