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采用ＭｏｎｔｅＣａｒｌｏ方法模拟了３ＣＳｉＣ材料中电子的静态输运特性．在细致分析材料的能带结构和主要散射机构，建立了适于统计模拟的物理模型的基础上，采用自洽的ＳＰＭＣ方法进行模拟，得出了电子迁移率随温度、电子平均漂移速度随电场的变化规律，及电子的能量和动量弛豫时间随温度和电场的变化规律．所得结果与实验符合较好．
The MonteCarlo method was used to simulate the electron static transport properties in 3CSiC materials. Based on the detailed analysis of the energy band structure and the main scattering mechanism of the material and the establishment of a physical model suitable for statistical simulation, the self-consistent SPMC method was used to simulate the electron mobility with the temperature and the average electron drift rate with the electric field The variation law of electron’s energy and momentum relaxation time with temperature and electric field. The result is in good agreement with the experiment.