论文部分内容阅读
文章以三电平应用为例,对IGBT器件工作过程中损耗的构成和影响因素进行分析,建立了一个适用于各种控制方式的三电平IGBT变频器损耗计算模型,其以软件仿真数据或试验数据作为输入来计算三电平拓扑中每个功率器件的损耗功率,计算值和测量值的误差在2%以内。利用该模型还可对前期产品设计进行仿真分析,精确计算系统损耗,并且根据器件损耗测试核对仿真的精确性,进而配置与之匹配的冷却系统,确保IGBT器件工作结温不超过器件要求值,并避免冷却系统的过度设计。对于不同功率器件搭建的系统,均可以参考和借鉴该方法进行系统损耗的精确计算。
Taking the three-level application as an example, this paper analyzes the composition and the influencing factors of IGBT devices during operation, and establishes a three-level IGBT inverter loss calculation model suitable for various control methods. The software simulation data or The test data is used as input to calculate the power loss of each power device in a three-level topology with an error of less than 2% between the calculated and measured values. The model can also be used to simulate and analyze the pre-product design, accurately calculate the system loss, and check the simulation accuracy according to the device loss test, and then configure the matching cooling system to ensure that the IGBT junction temperature does not exceed the device requirements, And avoid over-design of the cooling system. For different power devices to build the system, can refer to and draw on the method for accurate calculation of system loss.