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从化学键角度出发,利用Ⅲ—V族二元化合物元素间的电负性差△X*对禁带宽度作图的方法,发现化合物半导体的禁带宽度E_g随组成元素间的电负性差△X*的增加而增加,且基本上成直线关系,电负性差小于0.5的化合物是直接能隙半导体,大于或等于0.5的化合物是间接能隙半导体。由此直线关系导出了一元回归方程并计算得到不同组分下十一个三元合金和九个四元合金的禁带宽度,其值与用内插法等所得计算值及实验值间符合较好,文中对此规律作了定性解释。
From the chemical bonding point of view, the use of group III-V binary compounds between the elements of the electronegativity difference X * * forbidden band width mapping method and found that the compound semiconductor forbidden band width E_g with the elements of the electronegativity difference △ X * , And are substantially in a linear relationship. The compounds having a difference in electronegativity of less than 0.5 are direct gap semiconductors and the compounds of 0.5 or more are indirect gap semiconductors. Based on this linear relationship, the univariate regression equation was derived and the forbidden band widths of eleven ternary and nine quaternary alloys under different compositions were calculated. The calculated values and the experimental values were in good agreement with those obtained by interpolation Well, the article made a qualitative explanation of this law.