本文介绍了不同磷掺杂浓度的 a-Si∶H 膜的结构和电学、光学性质。实验结果表明:轻度的磷掺杂有促进薄膜晶化的作用,从而形成非晶相和微晶相二相混合结构。但当掺磷气体流量比大于5%时,磷掺杂对该膜晶化有抑制作用。这可能是由于在不同掺磷浓度时磷原子在 a-Si∶H 膜中的配位状态不同所致。另外,适当控制工艺条件可以制成高电导(～15Ω~(-1)cm~(-1))和宽带隙(～1.92eV)的优质 n 型 a-Si∶H 膜。 This paper presents the structure and electrical and optical properties of a-Si: H films with different phosphorus doping concentrations. The experimental results show that mild phosphorous doping can promote the crystallization of thin films and form a two-phase mixed structure of amorphous and microcrystalline phases. However, when the phosphorus-doped gas flow ratio is more than 5%, phosphorus doping inhibits the crystallization of the film. This is probably due to the different coordination states of phosphorus atoms in a-Si: H films at different phosphorus concentrations. In addition, a good n-type a-Si: H film with high conductivity (~ 15 Ω -1 cm -1) and wide bandgap (~ 1.92 eV) can be fabricated with appropriate process conditions.