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如果沟道厚度α不按照L/α》1的公式减薄,FET的栅长L缩短到亚微米范围就会引起负短沟道效应。为保持阈值电压不变,必须增加沟道掺杂浓度N_D～1/α~2。本文通过数值模拟和实验表明,掺杂浓度达到1.3×10~(18)cm~(-3)也能成功地用于制作GaAsMESFET。为了消除短沟道效应,同时使跨导截止频率达到最大值,计算了最佳掺杂浓度,发现计算结果与实验结果非常一致。在概述设计规则以后指出:“简单的”设计规则——用于分立MESFET,尤其是用于集成电路设计——将在亚微米范围仍然有效。
If the channel thickness α is not thinned by the formula L / α “1, shortening the gate length L of the FET to the submicron range causes a negative short-channel effect. In order to keep the threshold voltage constant, it is necessary to increase the channel doping concentration N_D ~ 1 / α ~ 2. In this paper, numerical simulation and experimental results show that the doping concentration of 1.3 × 10 ~ (18) cm ~ (-3) can also be successfully used to fabricate GaAsMESFETs. In order to eliminate the short-channel effect and maximize the transconductance cutoff frequency, the optimum doping concentration was calculated. The calculated results are in good agreement with the experimental results. After an outline of the design rules it is pointed out that ”simple" design rules - used for discrete MESFETs, especially for integrated circuit designs - will remain valid in the submicron range.