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研究了一种具有OB(Oxide By-passed)结构的SOI LDMOS器件,分析了该器件的耐压机理以及结构特点,并通过SILVACO TCAD软件对该结构进行三维数值仿真。通过仿真验证可知,该结构通过类超结(SJ)电场调制技术获得了与超结器件类似的性能,该结构与SJ LDMOS在相同的尺寸情况下尽管耐压相同,但导通电阻从3.81mΩ.cm2降低到1.96mΩ.cm2,同时克服了SJ LD-MOS器件制造工艺上高深宽比以及电荷浓度难易精确匹配的缺陷。
A SOI LDMOS device with an OB (Oxide By-passed) structure was studied. The breakdown mechanism and structural characteristics of the SOI LDMOS device were analyzed. The structure was simulated by SILVACO TCAD software. Simulation results show that the structure achieves similar performance to the superjunction device through SJ-like field modulation, which has the same breakdown voltage with SJ LDMOS at the same size but the on-state resistance increases from 3.81mΩ cm 2 to 1.96 mΩ.cm 2, while overcoming the drawbacks of the high aspect ratio of the SJ LD-MOS device manufacturing process and the difficulty of precisely matching the charge concentration.