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利用二维数字分析法研究了类三极管特性的结栅场效应晶体管(JFET)的设计准则。电流是由越过势垒进入到耗尽沟道的载流子产生的。与一般类五极管特性的FFT相比,漏电场起重要作用,它减低势垒高度,从而形成了类三极管的I-V特性。类三极管特性强烈地依赖于器件几何结构。这种工作模式只能在短栅器件中得以实现。沟道厚度α在决定器件工作模式时是极重要的参数。作为类三极管或类五极管特性的器件工作分别对应于窄沟道或宽沟道。如果运用于低阻负载直接驱动电路,那么处于类三极管和类五极管特性之间的混合特性比单纯的类三极管特性更为理想。这是因为它具有低的内阻和高的交流功率效率。栅-漏距离l_(gd)在决定击穿电压中也是很重要的参数。讨论了设计准则,并详细说明了在N_D-a和N_D-l_(gd)平面上关于类三极管特性、电路运用和击穿现象的最佳设计。发现,无需采用任何校准参数,计算和实验结果即很好的符合。本文给出的设计准则对于类三极管的设计将是有用的。
Two-dimensional digital analysis method is used to study the design criteria of the junction-field effect transistor (JFET) with triode characteristics. Current is generated by carriers crossing the barrier into the depletion channel. Compared with the FFT of the general pentode characteristic, the leakage electric field plays an important role in reducing the barrier height and thus forming the I-V characteristics of the triode. The triode characteristics strongly depend on the device geometry. This mode of operation can only be achieved in short gate devices. Channel thickness α is a very important parameter in determining the mode of operation of the device. Working as a triode-like or quasi-pentode-compatible device corresponds to narrow or wide trenches, respectively. If used in direct-drive low-impedance load circuit, then the characteristics of the hybrid between the triode and the pentode characteristics are better than pure triode characteristics. This is because it has low internal resistance and high AC power efficiency. Gate - drain distance l_ (gd) in the breakdown voltage is also very important parameters. The design criteria are discussed and the best design for transistor-type triode characteristics, circuit usage, and breakdown on the N_D-a and N_D-l_ (gd) planes is described in detail. Found that without using any calibration parameters, the calculation and experimental results that is a good match. The design guidelines presented in this paper will be useful for triode design.