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采用空间分辨光发射谱和傅里叶变换功率阻抗分析仪研究了衬底偏压和辉光功率对微晶硅薄膜沉积过程中的等离子体光学与电学特性的影响.研究表明:在交流偏压(AC)、悬浮(floating)、负直流加交流(-DC+AC)偏压下,Hα发射强度空间分布规律相似,平均鞘层长度相等;正直流加交流(+DC+AC)偏压和接地(grounded)时Hα发射强度显著增强,并存在双峰(doublelayers)现象.增大功率,Hα发射强度也随着增大,并在17W与22W之间产生跳变.电学测试发现功率增大,等离子体电阻降低,电抗降低,电容性增强.并对此进行了分析.
The effects of substrate bias and glow power on the optical and electrical properties of the plasma during the deposition of microcrystalline silicon thin films were studied by using the spatial resolution optical emission spectrum and the Fourier transform power impedance analyzer.The results show that under the bias voltage Under the bias voltage of AC, floating and AC plus AC, the spatial distribution of Hα emission intensity is similar and the average sheath length is equal. The positive DC plus AC (+ DC + AC) bias and The Hα emission intensities were significantly increased at grounded and there was a doublelayers phenomenon.When the power was increased, the emission intensity of Hα also increased and the transition occurred between 17W and 22 W. Electrical tests showed that the power increased , The plasma resistance is reduced, the reactance is reduced, the capacitance is enhanced, and this is analyzed.