十一、金属-氧化物-半导体相联存贮器相联存贮器和可相联编组系统,在过去几年中日益被注意,由于大规模集成(LSI)工艺的发展而使生产这些固体电路组合元件成为现实,才得到对它们的承认。在说明相联存贮器原理中,我们用金属-氧化物-半导体晶体管的具有128个单元构成阵列的相联存贮单元作为 11. Metal-Oxide-Semiconductor Associated Memory Associative memories and associative marshalling systems have been attracting increasing attention in the past few years due to the production of these solids due to the development of large scale integration (LSI) processes Circuit combination of components to become a reality, get their recognition. In describing the associative memory principle, we use an associated memory cell of an array of 128 cells of a metal-oxide-semiconductor transistor as the