A fuzzy framework based on an adaptive network fuzzy inference system(ANFIS) is proposed to evaluate the relative degradation of the basic subthreshold parameters due to hot-carrier effects for nanoscale thin-film double-gate(DG) MOSFETs.The effect of the channel length and thickness on the resulting degradation is addressed, and 2-D numerical simulations are used for the elaboration of the training database.Several membership function shapes are developed,and the best one in terms of accuracy is selected.The predicted results agree well with the 2-D numerical simulations and can be efficiently used to investigate the impact of the interface fixed charges and quantum confinement on nanoscale DG MOSFET subthreshold behavior.Therefore,the proposed ANFIS-based approach offers a simple and accurate technique to study nanoscale devices,including the hot-carrier and quantum effects. A fuzzy framework based on an adaptive network fuzzy inference system (ANFIS) is proposed to evaluate the relative degradation of the basic subthreshold parameters due to hot-carrier effects for nanoscale thin-film double-gate (DG) MOSFETs. The effect of the channel length and thickness on the resulting degradation is addressed, and 2-D numerical simulations are used for the elaboration of the training database. Federation membership function shapes are developed, and the best one in terms of accuracy is selected. the 2-D numerical simulations and can be effective used to investigate the impact of the interface fixed charges and quantum confinement on nanoscale DG MOSFET subthreshold behavior. Before, the proposed ANFIS-based approach offers a simple and accurate technique to study nanoscale devices, including the hot-carrier and quantum effects.