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研究了SPA-H钢在950~1 200℃温度下氧化1min的氧化膜生长规律。结果表明:在1 000℃条件下元素界面扩散氧化造成界面形成一层致密的以Si、Cr、Cu为主的氧化膜,可以起到明显的抗氧化作用;随着温度升高到1 100℃,加之元素扩散能力的差异,Si逐渐向铁皮内扩散,Cu、Cr仍以界面富集为主,但是由于Si元素界面富集量的减小,其界面层内的Cu、Cr元素含量升高,开始出现零星的内氧化圆点;温度升高到1 200℃,P、Cr等高温相不稳定,且由于达到富Si高温相的熔化温度,界面富集氧化膜完整性遭到破坏,内部形成较厚的氧化圆点。
The growth of the oxide film of SPA-H steel oxidized at 950-1,200 ℃ for 1 min was studied. The results show that the oxidation of elemental interface at 1 000 ℃ results in the formation of a dense layer of oxide film mainly composed of Si, Cr and Cu at the interface, which can play a significant antioxidant effect. With the increase of the temperature to 1100 ℃ , With the difference of element diffusion ability, Si gradually diffused into the metal shell. Cu and Cr were still mainly enriched in the interface, but the content of Cu and Cr in the interfacial layer increased due to the decrease of the enrichment of Si element , Began to appear sporadic internal oxidation dots; temperature increased to 1 200 ℃, P, Cr and other high temperature phase instability, and because of the Si-rich high temperature phase melting temperature, the integrity of the interface-enriched oxide film is destroyed, the internal The formation of thick oxide dots.