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采用改进布里奇曼法生长出外观完整的AgGa1-xInxSe2(x=0.2)单晶锭,晶体的红外透过率低,不能直接用于红外非线性光学器件制备。采用TA公司生产的SDTQ-600热分析仪进行DSC-TGA测试,发现其熔点为826.69℃,结晶点为750.86℃,总失重约为3.9217%。采用同成份粉末源包裹晶体,在抽空封结后进行退火处理。退火处理后晶体的红外透过率有明显改善。在4000 cm-1~7000 cm-1范围内红外透过率由原先低于25%改进到高于40%;在750 cm-1~4000 cm-1范围的红外透过率由原先低于45%改善到超过50%,在2000 cm-1~750 cm-1区域甚至高达60%。结果表明:采用同成分粉末源包裹,在抽空封结后退火处理能有效提高AgGa1-xInxSe2晶体的红外透过率,改善晶体的光学均匀性,退火后的晶体适合红外非线性光学器件制备。
The improved single-crystal ingot of AgGa1-xInxSe2 (x = 0.2) grown by the improved Bridgman method has low infrared transmittance and can not be directly used for the preparation of infrared nonlinear optics. DSC-TGA test was performed on a SDTQ-600 thermal analyzer manufactured by TA Company. The melting point was 826.69 ℃, the crystallization point was 750.86 ℃, and the total weight loss was about 3.9217%. Crystals were coated with the same powder source and annealed after the evacuation seal. After the annealing crystal infrared transmittance has improved significantly. In the range of 4000 cm-1 to 7000 cm-1, the infrared transmittance improved from less than 25% to more than 40%. The infrared transmittance in the range of 750 cm-1 to 4000 cm-1 decreased from 45% % To more than 50% and even up to 60% in the region of 2000 cm-1 to 750 cm-1. The results show that the annealing of the AgGa1-xInxSe2 crystals can be effectively improved by using the same composition powder source and annealing after evacuation and sealing, which can improve the optical uniformity of the crystals. The annealed crystals are suitable for the fabrication of infrared nonlinear optics.