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已研制出一套20GHz频段的单片砷化镓场效应晶体管低噪声放大器。设计与制造是由在一片半绝缘砷化镓基片上获得的微带线的传输特性来完成。所研制的这种单片放大器,是由在一片尺寸为2.75mm×1.45mm的绝缘砷化镓基片上的一个亚微米栅极的砷化镓金属半导体场效应晶体管和输入及输出分布匹配电路组成。在无任何附加的调谐装置的情况下,在21GHz频率上获得的噪声系数为6.2dB增益为7.5dB。
A 20GHz band monolithic gallium arsenide field-effect transistor (LNA) low noise amplifier has been developed. Design and fabrication is accomplished by the transmission characteristics of the microstrip line obtained on a semi-insulating gallium arsenide substrate. The monolithic amplifier was developed by a submicron gate gallium arsenide metal-semiconductor field-effect transistor and an input and output distribution matching circuit on a 2.75mm x 1.45mm insulated Gallium Arsenide substrate . The noise figure obtained at 21 GHz was 6.2 dB with a gain of 7.5 dB without any additional tuning device.