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随着微细加工的研究,近年来等离子技术已发展成为大规模和超大规模集成电路(LSI 和 VLSI)工艺的重要组成部分。PECVD 等离子增强淀积 Si~3N~4除具有 APCVD 和LPCVD 的优点外,等离子激活所需的低温度范围与电极使用的 Al、Au 等金属化相容,则是 PECVD 法的突出优点。等离子刻蚀具有高分辨率和各向异性。等离子刻蚀 Si~3N~4膜,比起常规的热磷酸湿法刻蚀可以容易地达到 VLSI 工艺规范要求。其线度为微米级
With the development of microfabrication, plasma technology has developed in recent years as an important part of large-scale and very large scale integrated circuit (LSI and VLSI) processes. In addition to the advantages of APCVD and LPCVD, the low temperature range required for plasma activation is compatible with the metallization of Al and Au used for the electrode, which is a prominent advantage of PECVD. Plasma etching has high resolution and anisotropy. Plasma etching Si ~ 3N ~ 4 film, compared to conventional hot phosphoric acid wet etching can easily meet the VLSI process specification requirements. Its linearity is on the order of microns