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日本富士通公司采用氮气为运载气体的汽相生长法研制成功了高效率的耿二极管。该器件在50千兆赫(毫米波)频带下工作,在激励电压为几伏的情况下具有120毫瓦的振荡输出和4％的振荡效率。以前,亚毫米波频带的耿二极管一般能用汽相生长法制造,而毫米波频带的器件则用液相生长法制造为好。世界上毫米波耿二极管的最高水平是由美国的维利安公司发表的,据称振荡输出为150毫瓦,效率为4％。富士通用氮气代替传统的氢气作为运载气体,确立了制造实用器件的技术。由此期望新器件能起到进一步开拓毫米波应用范围的作用。目前商品化的耿二极管以10千兆赫至25千兆赫频带(亚毫米波)的为主流,所使用
Japan's Fujitsu company using nitrogen as the carrier gas vapor phase growth method developed high-efficiency GDN diode. The device operates at 50 gigahertz (millimeterwave) frequency band with 120 milliwatts of oscillatory output and 4% of oscillation efficiency at excitation voltages of a few volts. In the past, GME diodes in the sub-millimeter-wave band have generally been manufactured by vapor phase growth, while devices in the millimeter-wave band have been fabricated by liquid-phase growth. The highest millimeter-wave diode in the world is published by the American company Vivian, claiming an oscillation output of 150 milliwatts and an efficiency of 4%. Fujitsu used nitrogen instead of conventional hydrogen as the carrier gas and established the technology for manufacturing practical devices. It is expected that the new device can play a further role in the development of millimeter-wave applications. Currently commercial Geng diodes are used in the 10 GHz to 25 GHz band (submillimeter waves)