论文部分内容阅读
对10位CMOSADC7910在不同偏置条件下的电离辐射效应及退火特性进行了研究。结果表明:模数混合电路在不同偏置条件下的电离辐照响应有很大的差异。与加电偏置相比,零偏下0.25Gy/s(Si)剂量率辐照时的辐射损伤更严重。并对其损伤机理进行了初步探讨。
Ionization radiation effects and annealing characteristics of 10 CMOSADC7910s under different bias conditions were studied. The results show that there are great differences in the ionizing radiation response of the analog-digital hybrid circuit under different bias conditions. Compared with the power-on bias, radiation damage at the dose rate of 0.25Gy / s (Si) at zero bias is more serious. And its damage mechanism was discussed.