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利用过滤阴极真空电弧系统制备了不同衬底偏压下非晶金刚石薄膜,分别采用X射线反射法测定了相应的非晶金刚石膜密度,分析了薄膜密度与沉积能量之间的变化规律,建立了薄膜密度随衬底偏压的变化曲线。研究发现在-80 V时非晶金刚石膜密度存在最大值3.26 g/cm3,随着偏压的增大和减小,薄膜的密度都相应的下降;当衬底偏压加到-2000 V时,密度减小到2.63 g/cm3,相对于密度的最大值变化较小。通过薄膜sp3 能态杂化含量与密度的简单比例关系,近似推算出非晶金刚石膜中sp3 能态的含量最高可达80%以上。
Amorphous diamond films with different substrate bias voltages were prepared by using filtered cathode vacuum arc system. The density of amorphous diamond films was measured by X-ray reflectometry. The variation of film density and deposition energy was analyzed. Film density curve with substrate bias. The results show that the maximum density of amorphous diamond film at -80 V is 3.26 g / cm3. With the increase and decrease of bias voltage, the density of the films decreases correspondingly. When the substrate bias voltage is increased to -2000 V, The density was reduced to 2.63 g / cm3, with a small change relative to the maximum density. Based on the simple proportional relationship between the content of sp3 energy and the density of sp3, the energy content of sp3 in amorphous diamond films can be approximated to be more than 80%.