论文部分内容阅读
对带有源负载的CMOS双平衡Gilbert有源混频器的1/f噪声、线性度与转换增益进行深入分析。这款采用PMOSFETs做负载的混频器工作于2.4 GHz频段。为降低混频器的1/f噪声,利用双阱工艺中的寄生垂直NPN晶体管作为开关,同时在PMOSFETs处并联最低噪声的分流电路作为负载。运用在PMOSFETs处的高性能运算放大器,不仅为零中频输出提供了合适的直流偏置电压,以避免下级电路的饱和,并能够为混频器提供足够高的转换增益。同时,在输入跨导(Gm)级电路中采用电容交叉耦合电路能够将转换增益进一步提高。为了增加混频器的线性度,采用共栅放大器作为输入跨导级电路。这款混频器采用TSMC 0.18μm 1-Poly6-Metal RF CMOS工艺,在1.5 V电源电压、3 mA的电流消耗下获得了17.78 dB的转换增益、13.24 dB的噪声因子和4.45 dBm输入三阶交调点的高性能。
The 1 / f noise, linearity and conversion gain of a CMOS double balanced Gilbert active mixer with active load are analyzed in detail. The mixer, which uses PMOSFETs as a load, operates in the 2.4 GHz band. In order to reduce the 1 / f noise of the mixer, a parasitic vertical NPN transistor in a double well process is used as a switch while a shunt circuit with the lowest noise is connected in parallel at the PMOSFETs as a load. The use of high-performance op amps at PMOSFETs not only provides a suitable DC bias voltage for zero IF output, but also avoids saturating the lower-level circuitry and provides sufficiently high conversion gain for the mixer. At the same time, the use of capacitive cross-coupling circuit in the input transconductance (Gm) level circuit can further improve the conversion gain. In order to increase the mixer’s linearity, a common gate amplifier is used as the input transconductance circuit. The mixer features a TSMC 0.18μm 1-Poly6-Metal RF CMOS process with 17.78 dB conversion gain, 13.24 dB noise figure and 4.45 dBm third-order input at 1.5 V supply voltage and 3 mA current consumption High-performance dotted.