用直流磁控反应溅射制备ＮｉＯ／ＮｉＦｅ双层膜。在保持ＮｉＦｅ层的厚度２０ｎｍ不变的条件下，发现尽管没有用外加磁场引导单向各向异性，由于底盘旋转等因素的影响，ＮｉＯ（７０ｎｍ）／ＮｉＦｅ（２０ｎｍ）双层结构仍显示较好的单向各向异性，交换耦合场可达３０Ｏｅ以上。通过改变ＮｉＯ层的厚度、溅射气体Ａｒ分压以及溅射气体与反应气体的比例Ａｒ／Ｏ２，研究了反铁磁层厚度以及溅射条件对交换耦合场的影响。 Preparation of NiO / NiFe Bilayers by Direct Current Magnetron Reactive Sputtering. It was found that the NiO (70nm) / NiFe (20nm) bilayer structure still showed better performance due to the influence of factors such as the chassis rotation, although the unidirectional anisotropy was not induced by the applied magnetic field, while maintaining the thickness of the NiFe layer at 20nm. Unidirectional anisotropy, exchange coupling field up to 30Oe above. The influence of the thickness of the antiferromagnetic layer and the sputtering conditions on the exchange coupling field was investigated by changing the thickness of the NiO layer, the Ar partial pressure of the sputtering gas and the Ar / O2 ratio of the sputtering gas to the reactive gas.