为了检测压电薄膜的在电场作用下的微小形变,同时避免基底弯曲效应的影响,设计了一 种双光束探测干涉仪,通过反馈控制和锁相检测技术,实现了高稳定度、高分辨力的目标,最小可探测形变可达到0.001nm。系统采用计算机控制测量和数据处理,使测量更加便捷、准确。 In order to detect the small deformation of the piezoelectric thin film under the action of electric field and to avoid the influence of substrate bending effect, a double beam detection interferometer was designed. Through feedback control and phase-lock detection technology, high stability, high resolution The goal, the minimum detectable deformation can reach 0.001nm. The system uses computer control measurement and data processing, making the measurement more convenient and accurate.