Synthesis of Single-Crystal TiO_2 Nanowire Using Titanium Monoxide Powder by Thermal Evaporation

来源 :Journal of Materials Science & Technology | 被引量 : 0次 | 上传用户:yufengdong
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TiO 2 nanowires were synthesized successfully in a large quantity by thermal evaporation using titanium monoxide powder as precursor. X-ray diffraction results showed that all the products were pure rutile phase of TiO 2 . According to microstructural observations, the nanowires have two typical morphologies, a long straight type and a short tortuous type. The straight nanowires were obtained at a wide temperature range of 900-1050 ℃, while the tortuous ones were formed below 900 ℃. Transmission electron microscopy characterization revealed that both the straight and the tortuous nanowires are single-crystal rutile TiO 2 . The preferential growth direction of the nanowires was determined as [110] orientation according to electron diffraction and high-resolution image analyses. The morphological change of TiO 2 nanowires was discussed by considering the different atomic diffusion rates of Ti atoms caused by the phase transformation in Ti substrate at around 900 ℃. TiO 2 nanowires were synthesized successfully in a large quantity by thermal evaporation using titanium monoxide powder as precursor. X-ray diffraction results showed that all the products were pure rutile phase of TiO 2. According to microstructural observations, the nanowires have two typical morphologies, a long straight type and a short tortuous type. The straight nanowires were obtained at a wide temperature range of 900-1050 ° C while the tortuous ones were formed below 900 ° C. Transmission electron microscopy characterization revealed that both the straight and the tortuous nanowires are The preferential growth direction of the nanowires was determined as [110] orientation according to electron diffraction and high-resolution image analyzes. The morphological change of TiO 2 nanowires was discussed by considering the different atomic diffusion rates of Ti atoms caused by the phase transformation in Ti substrate at around 900 ℃.
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