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Pn junctions based on single crystalline tellurium supersaturated silicon were formed by ion implantation followed by pulsed laser melting(PLM).P type silicon wafers were implanted with 245 keV ~(126)Te~+ to a dose of 2×10~(15) ions/cm~2,after a PLM process(248 nm,laser fluence of 0.30 and 0.35 J/cm~2,1-5 pulses,duration 30 ns),an n~+ type single crystalline tellurium supersaturated silicon layer with high carrier density(highest concentration 4.10×10~(19) cm~(-3),three orders of magnitude larger than the solid solution limit) was formed,it shows high broadband optical absorption from 400 to 2500 nm.Current-voltage measurements were performed on these diodes under dark and one standard sun(AM 1.5),and good rectification characteristics were observed.For present results,the samples with 4-5 pulses PLM are best.
Pn junctions based on single crystalline tellurium supersaturated silicon were formed by ion implantation followed by pulsed laser melting (PLM). P type silicon wafers were implanted with 245 keV ~ (126) Te ~ + to a dose of 2 × 10 ~ (15) ions / cm ~ 2, after a PLM process (248 nm, laser fluence of 0.30 and 0.35 J / cm ~ 2,1-5 pulses, duration 30 ns), an n ~ + type of single crystalline tellurium supersaturated silicon layer with high carrier density (highest concentration 4.10 × 10 ~ (19) cm -3, three orders of magnitude larger than the solid solution limit) was formed, it shows high broadband optical absorption from 400 to 2500 nm. Current-voltage measurements were performed On these diodes under dark and one standard sun (AM 1.5), and good rectification characteristics were observed. For present results, the samples with 4-5 pulses PLM are best.