Co-Sb基化合物被认为是中温应用的前景看好的热电材料。Aziz Ahmed等人采用射频共沉积法,室温下在SiO_2基体上制作了一系列Co-Sb基化合物。研究表明,沉积态Co-Sb_2薄膜是非晶态,经300℃退火得到晶体结构,高温X-射线衍射表明,Co-Sb_2在100~150℃开始晶化,退火薄膜晶体相成分与相图符合,然而微结构不同。测量Co-Sb化合物电、热性能随温度变化,并用相鉴定。缺陷浓度及可能传输机制说明其变 Co-Sb-based compounds are considered promising thermoelectric materials for medium temperature applications. Aziz Ahmed and others using RF co-deposition method, at room temperature on the SiO 2 matrix produced a series of Co-Sb-based compounds. The results show that the as-deposited Co-Sb 2 thin film is amorphous and its structure is annealed at 300 ℃. The high temperature X-ray diffraction shows that Co-Sb 2 begins to crystallize at 100-150 ℃, However, the microstructure is different. Co-Sb compounds measured electrical and thermal properties with temperature changes, and phase identification. Defective concentration and possible transport mechanism explains it