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目前常用的点火器Ｎｉ－Ｃｒ金属桥丝（热桥丝）体积较大，点火能量高（几十毫焦），作用时间长（几毫秒），且易误触发．本文中采用半导体器件和集成电路技术研制的新一代点火器——半导体桥（ＳＣＢ）体积小（为热桥丝三十分之一），结构上兼有Ｓｉ桥区倒圆点和Ｔｉ、Ａｌ金属导体倒圆点两大特点，其点火临界能量可降低到３～５ｍＪ，作用时间可缩短到５μｓ，从而能快速产生热等离子体来引爆猛炸药．同时，ＳＣＢ还具有较高的可靠性和安全性，其安全电流大于１．５Ａ．本文分析了ＳＣＢ工作原理，并研究了ＳＣＢ的结构对临界能量、点火作用时间、可靠性和安全电流的影响，最后对试验结果进行了讨论
Currently used Ignitor Ni-Cr metal bridge wire (heat bridge wire) larger volume, high ignition energy (tens of millijoules), the role of long time (a few milliseconds), and easy to trigger. In this paper, the semiconductor device and integrated circuit technology developed a new generation of ignition - the semiconductor bridge (SCB) small size (one-thirtieth of the thermal bridge wire), the structure of both Si bridge dot and Ti, Al, Metal conductor rounding two major characteristics, the ignition critical energy can be reduced to 3 ~ 5mJ, the role of time can be shortened to 5μs, which can quickly generate thermal plasma to detonate explosives. At the same time, SCB also has high reliability and safety, the safety current is greater than 1.5A. This paper analyzes the working principle of SCB, and studies the influence of the structure of SCB on critical energy, ignition time, reliability and safety current. Finally, the experimental results are discussed