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对应变硅pMOS反型层中的空穴迁移率进行了理论研究.使用应力相关的6能带k·p模型,自洽地求解垂直于沟道方向的一维薛定谔方程与泊松方程,获得反型层中二维空穴气的能带结构.采用蒙特卡罗方法对单轴压应力和双轴张应力情况下的空穴迁移率进行了模拟研究,得出了沟道迁移率随垂直于沟道电场变化的曲线,并与常规的非应变硅pMOS迁移率进行了比较.模拟结果显示:无论是单轴压应力还是双轴张应力,都使得空穴迁移率增大.当单轴压应力沿着[110]沟道时,迁移率增大的幅度最大,平均增幅可达到170%左右.
The hole mobility in the pMOS inversion layer of the strained silicon has been studied theoretically.Using the stress-dependent 6-band k · p model, the one-dimensional Schrödinger equation and the Poisson’s equation perpendicular to the channel direction are solved consistently to obtain the Band structure of two-dimensional hole gas in the inversion layer.The hole mobility in the case of uniaxial compressive stress and biaxial tensile stress was simulated by Monte-Carlo method, and the relationship between the channel mobility and the vertical And the mobility of pMOS in conventional unstrained silicon is compared.The results show that both the uniaxial compressive stress and the biaxial tensile stress increase the hole mobility.When the uniaxial When the compressive stress is along [110] channel, the mobility increase rate is the largest, the average increase can reach about 170%.