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针对移动物联网设备,提出一种基于多值RRAM的快速逻辑电路,以实现非易失性存储与快速逻辑运算。利用RRAM多值存储特性,采用Crossbar结构,实现了简单快速的译码器与高存储密度查找表,使逻辑电路具有较快的运算速度和较小的面积。基于该结构实现了4位、8位和16位的乘法器,其外围电路采用SMIC 65 nm CMOS工艺实现,而其核心多值RRAM则采用Verilog-A模型模拟。仿真结果表明,与传统CMOS逻辑电路相比,基于多值RRAM的16位乘法器的速度提高了35.7%,面积减少了14%。
For mobile IoT devices, a fast logic circuit based on multi-valued RRAM is proposed to realize non-volatile storage and fast logic operation. Using RRAM multi-value memory characteristics, using Crossbar structure, to achieve a simple and fast decoder and high storage density lookup table, so that the logic circuit has a faster computing speed and smaller area. Based on the structure, a 4-bit, 8-bit and 16-bit multiplier are implemented. The peripheral circuits are implemented in the SMIC 65 nm CMOS process while the core multi-valued RRAM is simulated with the Verilog-A model. The simulation results show that the 16-bit multiplier based on multi-valued RRAM improves the speed by 35.7% and the area by 14% compared with the traditional CMOS logic circuit.