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给出了超薄栅 MOS结构中直接隧穿弛豫谱 ( DTRS)技术的细节描述 ,同时在超薄栅氧化层 ( <3 nm)中给出了该技术的具体应用 .通过该技术 ,超薄栅氧化层中明显的双峰现象被发现 ,这意味着在栅氧化层退化过程中存在着两种陷阱 .更进一步的研究发现 ,直接隧穿应力下超薄栅氧化层 ( <3 nm)中的界面 /氧化层陷阱的密度以及俘获截面小于 FN应力下厚氧化层 ( >4nm)中界面 /氧化层陷阱的密度和俘获截面 ,同时发现超薄氧化层中氧化层陷阱的矩心更靠近阳极界面
The details of the direct tunneling relaxation spectrum (DTRS) technique in ultra-thin gate MOS structures are given, and the specific application of this technique is given in ultra-thin gate oxide (<3 nm) The obvious bimodal phenomenon in the thin gate oxide is found, which means there are two kinds of traps in the process of gate oxide degradation.Further study found that the ultrathin gate oxide (<3 nm) The density of the interfacial / oxide traps and the capture cross section are less than the density and capture cross sections of the interfacial / oxide traps in the thick oxide (> 4 nm) at FN stress, and the centroids of the oxide traps in the ultrathin oxide layer are found to be closer Anode interface