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La_(2/3)Sr_(1/3)MnO_3 films are deposited on(001) silicon substrates,in which the silicon surfaces have artificially been treated into the scallops-like,pyramid-like,and smooth polishing structure,by pulsed laser deposition.The magnetoresistances of the films on etched substrates under low applied field are very sensitive to the applied field,and much larger(14.3% for acid-etched,and 42.9% for alkali-etched) than that on the polished Si at 5 K.Zero-field-cooled and field-cooled magnetization behaviors are measured and analyzed.Remarkable upturn behaviors in temperature-dependent resistivity for all samples are observed at low temperature,which follows the Efros-Shkloskii variable range hopping law and the Arrhenius law.We believe that the rough surface may be useful in device design.
La 2/3 Sr 1/3 (1/3) MnO 3 films are deposited on (001) silicon substrates, where the silicon surfaces have artificially been treated into the scallops-like, pyramid-like, and smooth polishing structures, by pulsed laser deposition. magnetoresistances of the films on etched substrates under low applied fields are very sensitive to the applied fields, and much much (14.3% for acid-etched, and 42.9% for alkali-etched) than that on the polished Si at 5 K .Zero-field-cooled and field-cooled magnetization profiles are measured and analyzed. Marked upturn behaviors in temperature-dependent resistivity for all samples are observed at low temperature, which follows the Efros-Shkloskii variable range hopping law and the Arrhenius law. believe that the rough surface may be useful in device design.