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一种在反馈电路中采用介质谐振器和稳定电阻的新型高稳定GaAs FET振荡器业已研制成功。振荡器由微波集成电路制成,外部品质因数Q_(ex)优于1000,而无滞后现象。该振荡器的微波特性如下: (1)在11.85GHz上输出功率为70mW,效率高达20％;(2)调谐范围宽达1000MHz以上;(3)用5个不同尺寸的介质谐振器在相同的微波电路内可以实现的振荡频率复盖为9～14GHz;(4)频率稳定度高,在-20～+60℃温度范围内稳定度达±150kHz;(5)调频噪声低,在偏离载频100kHz处为9.07Hz/((Hz)~(1/2))。
A new high-stability GaAs FET oscillator with dielectric resonators and stabilizing resistors in the feedback circuit has been developed. Oscillator made of microwave integrated circuits, external quality factor Q_ (ex) better than 1000, without hysteresis. The microwave characteristics of the oscillator are as follows: (1) the output power is 70 mW at 11.85 GHz and the efficiency is as high as 20%; (2) the tuning range is wider than 1000 MHz; (3) five different sizes of dielectric resonators are used in the same (4) high frequency stability, stability in the temperature range of -20 ~ + 60 ℃ ± 150kHz; (5) FM noise is low, at a deviation from the carrier frequency 9.07 Hz / ((Hz) ~ (1/2)) at 100 kHz.