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本文用射频磁控溅射法制备了CeO2-x高温氧敏薄膜。利用X射线光电子能谱（XPS）研究了不同处理条件对CeO2-x薄膜电子组态的影响，特别是对表面的价态和吸附性质的影响。通过对Ce3dXPS谱的高斯拟合，计算了Ce3+浓度并给出了判定Ce4+还原的标志。研究结果表明，在空气中经1173K高温退火后可得到结晶完好的多晶CeO2薄膜，而薄膜的化学价态没有变化，退火前后薄膜表面总有少量Ce3+存在（15％）。退火后部分还原的CeO2表面具有极强的吸附和再氧化能力，还原程度越高，其再氧化的能力也越强。
In this paper, RF magnetron sputtering CeO2-x high-temperature oxygen-sensitive film was prepared. X-ray photoelectron spectroscopy (XPS) was used to study the effect of different treatment conditions on the electronic configuration of CeO2-x thin films, especially on the valence and adsorption properties of the surface. Through the Gaussian fitting of Ce3dXPS spectra, the concentration of Ce3 + was calculated and the sign of determining Ce4 + reduction was given. The results show that the crystalline polycrystalline CeO2 film can be obtained by annealing at high temperature of 1173K in air without any change in the chemical valence of the film, and a small amount of Ce3 + is always present on the surface of the film before and after annealing (15%). After annealing, the partially reduced surface of CeO2 has strong adsorption and reoxidation ability. The higher the reduction degree, the stronger its reoxidation ability.