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电子倍增型GaAs光阴极是利用雪崩倍增效应的一种新型光阴极组件,通过在常规GaAs光阴极中引入雪崩电子倍增层制备了GaAs光阴极/电子倍增器一体化组件,研究了该组件的热清洗温度、电子增益等性能.对组件热清洗工艺前后的I-V特性进行了对比测试,结果表明,该组件可以承受580℃的热清洗温度,并获得了12.6倍的电子增益;880nm处的探测灵敏度≥3.87mA/w;暗电流密度≤6.79×10-5mA/cm2.
The electron multiplying GaAs photocathode is a new type of photocathode which utilizes the avalanche multiplication effect. The GaAs photocathode / electron multiplier integrated module is fabricated by introducing avalanche electron multiplying layer in the conventional GaAs photocathode. The thermal Cleaning temperature, electronic gain, etc. The IV characteristics of the module before and after the thermal cleaning process were compared and the results show that the module can withstand 580 ℃ thermal cleaning temperature and obtain 12.6 times the electronic gain; 880nm at the detection sensitivity ≥ 3.87mA / w; dark current density ≤ 6.79 × 10-5mA / cm2.