美国普渡大学研究人员采用β-Ga_2O_3半导体材料制造出了场效应晶体管,这种材料将能够用于制造超高效率开关,应用于电网、军用舰船和飞机等。β-Ga_2O_3有望成为下一代“电力电子”材料,或用于控制电路中电流的器件。该研究成果已发表于IEEE电子器件快报。研究意义美国普渡大学电子与计算机工程专业教授称,绝缘体上β-Ga_2O_3场效应晶体管——GOOI,具有超宽禁带,与其它晶体管相比,β-Ga_2O_3器件具有更高的击穿电 Researchers at Purdue University in the United States used beta-Ga_2O_3 semiconductor materials to create field-effect transistors that could be used to make ultra-high efficiency switches for power grids, military ships and aircraft. β-Ga 2 O 3 is expected to become the next generation of “power electronics” materials, or devices used to control the current in the circuit. The research results have been published in the IEEE Electronic Devices Letters. Research Significance Purdue University professor of electrical and computer engineering, said insulator, β-Ga_2O_3 field effect transistor - GOOI, with a wide band gap, compared with other transistors, β-Ga_2O_3 device has a higher breakdown voltage