在讨论半导体器件的电极布线时,从铝的导电性、加工性、与氧化层的粘附性、与硅的欧姆接触性等考虑,铝几乎是单一金属材料中最好的布线材料,因而它长时间以来占有重要地位。但是这种材料也附带有一些难以克服的缺点,即机械强度差、抗化学腐蚀性差,在布线上通电时,会引起电徙动和形成毛刺等。为了弥补这些缺点,以往试用过用低温生长的绝缘膜复盖腐蚀制作的铝布线的方法,由此克服了前一个缺点,但对后一缺点无所效用。我们发展了代替以前腐蚀工艺的新布线工艺,采用与以往不同的铝布线结构,不仅克服了上述缺点,还带来了更多的优点和应用。其中有显著效果的是铝的阳极氧化 In discussing the electrode wiring of a semiconductor device, aluminum is almost the best wiring material in a single metal material from the viewpoint of conductivity, workability of the aluminum, adhesion with the oxide layer, ohmic contact with silicon, etc., so that it For a long time occupy an important position. However, this material is also accompanied by some insurmountable shortcomings, namely poor mechanical strength, poor chemical resistance, when the wiring is energized, it will cause electrical migration and the formation of burrs and so on. In order to remedy these shortcomings, the conventional method of covering an aluminum wiring by etching with an insulating film grown at a low temperature has been tried, thus overcoming the former disadvantage but not contributing to the latter disadvantage. We have developed a new wiring process instead of the previous etching process, using different than the previous aluminum wiring structure, not only to overcome the above shortcomings, but also brought more advantages and applications. One of the notable effects is the anodization of aluminum