芯片制造巨头AMD和IBM公司联合开发出一种新的应变硅技术,他们声称能将晶体管的速度提高24%。这种称之为双应力线性的应变硅工艺通过拉伸一个晶体管中的硅原子和压缩另一个晶体管中的硅原子来提高n沟道晶体管和p沟道晶体管的性能。这种技术无需复杂和高成本的新制造方法,用普通 Chip maker giant AMD and IBM have jointly developed a new strained silicon technology that they claim will increase the speed of transistors by 24%. This strained double-stress linearized silicon process increases the performance of n-channel transistors and p-channel transistors by stretching the silicon atoms in one transistor and compressing the silicon atoms in the other transistor. This technique eliminates the need for complicated and costly new manufacturing methods, used plainly