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一、引言 半导体晶体在核辐射探测器的生产中已使用了三十余年。从最初的扩散p-n结的极窄的耗尽层起到现在,我们已得到大体积高纯锗探测器。达到目前的成果必然在半导体材料和方法的研究发展方面做出了巨大的努力。 大约在十年前,通用电气公司的霍尔预言,把锗提纯到足够高的纯度,有可能不必用锂漂移方法就能制造出大体积辐射探测器来。今天,我们完全能够对霍尔的卓越见解给以正确评价。高纯锗制成的探测器已有市售。本文的大部分内容将论述超纯锗所得到的振奋人心的最新成果。
I. INTRODUCTION Semiconductor crystals have been used for more than thirty years in the production of nuclear radiation detectors. From the very narrow depletion layer of the initial diffusion p-n junction, up to now we have obtained large-volume high purity germanium detectors. Achieving the current achievements inevitably has made tremendous efforts in the research and development of semiconductor materials and methods. About ten years ago, General Electric Hall’s prophecy, purifying germanium to high enough purity, it was possible to make large-volume radiation detectors without the need for lithium drift. Today, we are perfectly capable of appraising Hall’s excellent ideas. Detectors made of high purity germanium are commercially available. Much of this article will discuss the exciting newest results of ultra-pure germanium.