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本文报导了用光致发光和光声光谱方法研究不同掺磷非晶硅的辐射复合和非辐射复合过程。试验结果表明随着掺磷量增加,掺磷非晶硅光致发光积分强度呈指数减少,光声谱讯号略有增加。该现象可解释为因引入磷杂质扩大了缺陷态密度而带来了非辐射复合中心数增多。文中还结合光吸收谱进行了讨论。
In this paper, the photoluminescence (PL) and photoacoustic spectroscopy (PL) were used to study the radiative and nonradiative recombination processes of different phosphorus-doped amorphous silicon. The experimental results show that with the increase of phosphorus content, the integrated intensity of photoluminescence of phosphorus-doped amorphous silicon decreases exponentially and the photoacoustic spectrum signal increases slightly. This phenomenon can be explained as an increase in the number of nonradiative recombination centers due to the introduction of phosphorus impurities to expand the density of defect states. The paper also discusses the light absorption spectrum.