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本文用液相外延方法制备异质n/p结构n-PbTe/p-PbSnTe/p~+-PbSnTe外延片。衬底为汽相法生长的PbSnTe,晶向为(100),外延生长温度为520°～550℃。在纯净氢气氛下长出平整无沾铅的外延片。用台面二极管工艺制备红外探测器,在77K下,十元线列的平均性能分别为D_(10μm)~*=1.94×10~(10)cmHz~(1/2)W~(-1),R_(bb)~*=1.2×10~3V/W,R_0A=0.25Ωcm~2,λ_0=11.6±0.1μm。小光点试验和电学测量表明:电学和光学串音可忽略不计。单元器件D_λ~*最大达2.91×10~(10)cmHz(1/2)W~(-1),R_0A最大达3.4Ωcm~2。噪声频谱测试表明:1/f拐点处的频率可低达30～40Hz。
In this paper, a heterogeneous n / p structure n-PbTe / p-PbSnTe / p ~ + -PbSnTe epitaxial wafer was prepared by liquid-phase epitaxy. The substrate is grown by vapor-phase method PbSnTe, crystal orientation (100), epitaxial growth temperature of 520 ° ~ 550 ℃. In a pure hydrogen atmosphere without the formation of flat lead-free extension of the film. The average performance of the 10-line array at 77K is 1 × 10 ~ (10) cm ~ (1/2) W ~ (-1) when the infrared detector is fabricated by a mesa diode process. R bb to * = 1.2 × 10 -3 V / W, R_0A = 0.25 Ωcm -2, and λ_0 = 11.6 ± 0.1 μm. Small spot tests and electrical measurements show that electrical and optical crosstalk is negligible. The maximum value of D_λ ~ * is 2.91 × 10 ~ (10) cmHz (1/2) W ~ (-1) and R_0A is up to 3.4Ωcm ~ 2. The noise spectrum test shows that the frequency at 1 / f inflection point can be as low as 30 ~ 40Hz.