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用脉冲电弧离子镀技术,通过调整掺硅石墨靶和纯石墨靶的数量,制备了一系列不同硅含量的类金刚石薄膜样品.研究发现:当硅含量达6.7at.%时,类金刚石薄膜的应力从4.5GPa降低到3.1GPa,薄膜的硬度还保持在3600Hv,和没有掺杂的类金刚石薄膜的硬度相比,基本保持不变;当硅含量小于6.7at.%时薄膜的摩擦系数相对于未掺杂的类金刚石薄膜也保持不变,为0.15.当薄膜中硅含量继续增加时,薄膜中C—Si键的含量增多,导致薄膜硬度和应力都有较大幅度地减小、摩擦系数增大、磨损性能也变差了.
A series of diamond-like carbon films with different silicon contents were prepared by pulsed arc ion plating technique by adjusting the amount of silicon-doped graphite target and pure graphite target.The results show that when the silicon content reaches 6.7at.%, The stress decreases from 4.5GPa to 3.1GPa, the hardness of the film remains at 3600Hv, which is basically the same as that of the diamond-free diamond-like carbon film. When the silicon content is less than 6.7at.%, The friction coefficient of the film is about The undoped diamond-like carbon film also remained unchanged at 0.15.When the content of silicon in the film continued to increase, the content of C-Si bond in the film increased, resulting in the film hardness and stress are greatly reduced, the friction coefficient Increased, wear performance also worsened.