论文部分内容阅读
2014年10月7日,瑞典皇家科学院公布诺贝尔物理学奖得主,赤崎勇、天野浩、中村修二凭借对高亮度蓝色发光二极管(LED)的杰出贡献成功当选。中村现供职于美国加利福尼亚大学圣塔芭芭拉分校(CSB),该校称中村所开发的氮化镓(Ga N)基半导体光器件“是过去30 a半导体领域中最为突出的成果之一”。目前,中村教授正在进行的课题之一是如何合理利用Ga N结晶的非极性面和半极性面,以削弱压电电场
On October 7, 2014, the Royal Swedish Academy of Sciences announced that Nobel Prize winners Akasaki Akira, Amano Akira and Nakamura Shunsuke have been selected for their excellent contribution to the high brightness blue light emitting diode (LED). Currently working for the University of California, Santa Barbara (CSB), Nakamura said that the company’s “Ga N-based semiconductor optical device” developed by Nakamura was one of the most prominent achievements in the semiconductor field over the past 30 years ". Currently, one of the ongoing issues of Professor Nakamura is how to make rational use of non-polar and semipolar surfaces of Ga N crystals to weaken the piezoelectric field