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设计了一种高电源抑制比(PSRR)、低温漂的无电阻带隙基准源。在传统无电阻带隙基准电压源的基础上引入反馈环路,实现了对电压的箝制,减小了沟道长度调制效应和失调电压,提高了带隙基准源的PSRR。引入正温度补偿电路,减小了带隙基准源的温度系数。采用TSMC 0.18μm CMOS工艺对电路进行了仿真。结果表明,在3 V工作电压下,在低频下带隙基准源的PSRR为-65 d B,在-25℃~125℃温度范围内的温度系数为3.72×10~(-5)/℃。
A high power supply rejection ratio (PSRR) and low temperature drift resistorless bandgap reference are designed. A feedback loop is introduced on the basis of the traditional resistorless bandgap voltage reference, which realizes the voltage clamping, reduces the channel length modulation effect and offset voltage, and improves the PSRR of the bandgap reference. Introducing a positive temperature compensation circuit reduces the temperature coefficient of the bandgap reference. The circuit was simulated using a TSMC 0.18μm CMOS process. The results show that the PSRR of the bandgap reference at low frequency is -65 dB at 3 V and the temperature coefficient is-3.72 × 10 -5 / ℃ at -25 ℃ ~ 125 ℃.