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对半导体表面的研究不泛其人,除了表面场效应是应是MOS器件的理论基础之外,另一主要原因是因为表面场效应能够对平面器件的PN结及晶体管的特性产生巨大的影响。自从Grove在1967年转为系统.但比较粗糙地提出了关于平面PN结击穿电压的表面功效应之后,对于利用表面场来控制P结就得到了更广泛的研究。de.Graaff.用计算机进行的二维模拟计算,描述了局部栅复盖PN结的表面击穿。F.Cont,和Mcont;则在1974年提出了用表面场的900v平面二极管的报告。目前,该方面的工作处于对栅控二极管表面
The study of semiconductor surface is not the only one. In addition to the surface field effect should be the theoretical basis of MOS devices, another major reason is that the surface field effect can have a huge impact on the PN junction and transistor characteristics of planar devices. Since Grove switched to system in 1967, the surface power effect on plane PN junction breakdown voltage has been relatively rough, and more extensive research has been conducted on the control of P junction using the surface field. A computer simulation of a 2D simulation describes the surface breakdown of a local gate covered PN junction. F. Cont, and Mcont; then in 1974 presented the report of a 900v planar diode with a surface field. At present, the work in this area is on the gated diode surface