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以 Si2 H6 和 Ge H4 作为源气体 ,用 UHV/CVD方法在 Si( 1 0 0 )衬底上生长了 Si1- x Gex 合金材料和 Si1- x Gex/Si多量子阱结构 .用原子力显微镜、X光双晶衍射和透射电子显微镜对样品的表面形貌、均匀性、晶格质量、界面质量等进行了研究 .结果表明样品的表面平整光滑 ,平均粗糙度为 1 .2 nm;整个外延片各处的晶体质量都比较好 ,各处生长速率平均偏差为 3.31 % ,合金组分 x值的平均偏差为 2 .0 1 % ;Si1- x Gex/Si多量子阱材料的 X光双晶衍射曲线中不仅存在多级卫星峰 ,而且在卫星峰之间观察到了 Pendellosung条纹 ,表明晶格质量和界面质量都很好 ;Si1- xGex/Si多量子阱材料的 TEM照片中观察不到位错的存在
Si1-x Gex alloy and Si1-x Gex / Si MQWs were grown on Si (100) substrates by UHV / CVD using Si2 H6 and Ge H4 as source gases. The surface morphology, uniformity, lattice quality and interface quality of the samples were studied by optical double crystal diffraction and transmission electron microscopy.The results show that the surface of the sample is smooth and the average roughness is 1.2 nm. The crystal quality of Si1-xGex / Si multi quantum well materials is better, the average growth rate of each part is 3.31%, and the average deviation of x value of the alloy composition is 2.01% In which not only multiple satellite peaks but also Pendellosung fringes were observed between the satellite peaks indicating good lattice quality and interface quality; no dislocations were observed in TEM images of Si1-xGex / Si multiple quantum well materials