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以十甲基环五硅氧烷(D5)和氧气(O2)作为反应气体,采用电子回旋共振等离子体化学气相沉积(ECR-CVD)方法制备了k=2.62的SiCOH薄膜.研究了O2掺杂对薄膜结构与电学性能的影响.结果表明,采用O2掺杂可以在保持较低介电常数的前提下极大地降低薄膜的漏电流,提高薄膜的绝缘性能,这与薄膜中Si-O立体鼠笼、Si-OH结构含量的提高有关.
An SiCOH thin film with k = 2.62 was prepared by electron cyclotron resonance plasma chemical vapor deposition (ECR-CVD) method using decamethylcyclopentasiloxane (D5) and oxygen (O2) as reactant gases. On the structure and electrical properties of the thin film.The results show that the use of O2 doping can greatly reduce the film leakage current and improve the insulation performance of the film under the premise of maintaining a low dielectric constant, Cage, Si-OH structure of the increase.